IRFB3006G MOSFET

Specifications of IRFB3006G MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 60 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 2.5 mΩ
  • Continuous Drain Current: 270 A
  • Total Gate Charge: 200 nC
  • Power Dissipation: 375 W
  • Package: TO-220AB

Pinout of IRFB3006G

IRFB3006G pinout

Replacement and Equivalent of IRFB3006G Transistor

You can replace the IRFB3006G with the IRFB3006