IRF1010NS MOSFET
Specifications of IRF1010NS MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 11 mΩ
- Continuous Drain Current: 84 A
- Total Gate Charge: 80 nC
- Power Dissipation: 3.8 W
- Package: D2-PAK
Pinout of IRF1010NS
Replacement and Equivalent of IRF1010NS Transistor
You can replace the IRF1010NS with the
IRF1010EZS,
IRF1010ZS,
IRF1405S,
IRF1405ZS,
IRF1407S,
IRF2805S,
IRF2807ZS,
IRF2907ZS,
IRF3205S,
IRF3205ZS,
IRF3805S,
IRF3808S,
IRFS3006,
IRFS3107,
IRFS3206,
IRFS3207,
IRFS3207Z,
IRFS3306,
IRFS3307,
IRFS3307Z,
IRFS3507,
IRFS4010,
IRFS4310,
IRFS4310Z,
IRFS4410,
IRFS4410Z
