Specifications of IRF1010NS MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 55 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 11
  • Continuous Drain Current: 84 A
  • Total Gate Charge: 80 nC
  • Power Dissipation: 3.8 W
  • Package: D2-PAK

Pinout of IRF1010NS

IRF1010NS pinout

Replacement and Equivalent of IRF1010NS Transistor

You can replace the IRF1010NS with the IRF1010EZS, IRF1010ZS, IRF1405S, IRF1405ZS, IRF1407S, IRF2805S, IRF2807ZS, IRF2907ZS, IRF3205S, IRF3205ZS, IRF3805S, IRF3808S, IRFS3006, IRFS3107, IRFS3206, IRFS3207, IRFS3207Z, IRFS3306, IRFS3307, IRFS3307Z, IRFS3507, IRFS4010, IRFS4310, IRFS4310Z, IRFS4410, IRFS4410Z