Specifications of IRF1010EZS MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 60 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 8.5
  • Continuous Drain Current: 84 A
  • Total Gate Charge: 58 nC
  • Power Dissipation: 140 W
  • Package: D2-PAK

Pinout of IRF1010EZS

IRF1010EZS pinout

Replacement and Equivalent of IRF1010EZS Transistor

You can replace the IRF1010EZS with the IRF1407S, IRF2907ZS, IRF3808S, IRFS3006, IRFS3107, IRFS3206, IRFS3207, IRFS3207Z, IRFS3306, IRFS3307, IRFS3307Z, IRFS4010, IRFS4310, IRFS4310Z