2SD1626 Bipolar Transistor

Characteristics of 2SD1626 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 10 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 4000
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1626

Here is an image showing the pin diagram of this transistor.


The 2SD1626 transistor is marked as "DI".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1626 is the 2SB1126.
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