2SB1126 Bipolar Transistor

Characteristics of 2SB1126 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -10 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 4000
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB1126

Here is an image showing the pin diagram of this transistor.


The 2SB1126 transistor is marked as "BI".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1126 is the 2SD1626.
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