2SB762A-P Bipolar Transistor

Characteristics of 2SB762A-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 120 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB762A-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB762A-P transistor can have a current gain of 120 to 250. The gain of the 2SB762A will be in the range from 40 to 250, for the 2SB762A-Q it will be in the range from 70 to 150, for the 2SB762A-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB762A-P might only be marked "B762A-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB762A-P is the 2SD857A-P.

SMD Version of 2SB762A-P transistor

The BDP952 (SOT-223) is the SMD version of the 2SB762A-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB762A-P transistor

You can replace the 2SB762A-P with the 2SA1488A, 2SA1634, 2SA1635, 2SA771, 2SB633, 2SB870, 2SB942A, 2SB942A-P, 2SB944, 2SB945, 2SB946, BD244B, BD244C, BD538, BD540B, BD540C, BD544B, BD544C, BD546B, BD546C, BD800, BD802, BD810, BD952, BD954, BD956, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D44C10, D44C11, D44C12, D45C10, D45C11, D45C12, D45H11, D45H11FP, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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