2SB762A Bipolar Transistor

Characteristics of 2SB762A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB762A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB762A transistor can have a current gain of 40 to 250. The gain of the 2SB762A-P will be in the range from 120 to 250, for the 2SB762A-Q it will be in the range from 70 to 150, for the 2SB762A-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB762A might only be marked "B762A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB762A is the 2SD857A.

SMD Version of 2SB762A transistor

The BDP952 (SOT-223) is the SMD version of the 2SB762A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB762A transistor

You can replace the 2SB762A with the 2SA1488A, 2SA771, 2SB633, 2SB942A, BD244B, BD244C, BD538, BD540B, BD540C, BD800, BD802, BD810, BD952, BD954, BD956, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D44C10, D44C11, D44C12, D45C10, D45C11, D45C12, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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