2SB1229-S Bipolar Transistor

Characteristics of 2SB1229-S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 140 to 280
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SB1229-S

The 2SB1229-S is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1229-S transistor can have a current gain of 140 to 280. The gain of the 2SB1229 will be in the range from 100 to 560, for the 2SB1229-R it will be in the range from 100 to 200, for the 2SB1229-T it will be in the range from 200 to 400, for the 2SB1229-U it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1229-S might only be marked "B1229-S".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1229-S is the 2SD1835-S.

SMD Version of 2SB1229-S transistor

The 2SA1364 (SOT-89), 2SB1115 (SOT-89), 2SB1115-YM (SOT-89), 2SB1122 (SOT-89), 2SB1122-S (SOT-89), 2SB1123 (SOT-89), 2SB1123-S (SOT-89), 2SB766A (SOT-89), BSP31 (SOT-223) and BSR31 (SOT-89) is the SMD version of the 2SB1229-S transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1229-S transistor

You can replace the 2SB1229-S with the 2SA1680, 2SA1761, 2SB892, 2SB892-S, 2SB985 or 2SB985S.
If you find an error please send an email to mail@el-component.com