2SB1123-R Bipolar Transistor

Characteristics of 2SB1123-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB1123-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1123-R transistor can have a current gain of 100 to 200. The gain of the 2SB1123 will be in the range from 100 to 560, for the 2SB1123-S it will be in the range from 140 to 280, for the 2SB1123-T it will be in the range from 200 to 400, for the 2SB1123-U it will be in the range from 280 to 560.


The 2SB1123-R transistor is marked as "BFR".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1123-R is the 2SD1623-R.

Replacement and Equivalent for 2SB1123-R transistor

You can replace the 2SB1123-R with the 2DA1213, 2SA1213, 2SB1124 or 2SB1124-R.
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