IRFS4010 MOSFET
Specifications of IRFS4010 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 4.7 mΩ
- Continuous Drain Current: 180 A
- Total Gate Charge: 143 nC
- Power Dissipation: 375 W
- Package: D2-PAK
Pinout of IRFS4010
