IRFB4227 MOSFET
Specifications of IRFB4227 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 26 mΩ
- Continuous Drain Current: 65 A
- Total Gate Charge: 70 nC
- Power Dissipation: 190 W
- Package: TO-220AB
Pinout of IRFB4227
