IRFB4127 MOSFET
Specifications of IRFB4127 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 20 mΩ
- Continuous Drain Current: 76 A
- Total Gate Charge: 100 nC
- Power Dissipation: 375 W
- Package: TO-220AB
Pinout of IRFB4127
