IRFB3307 MOSFET
Specifications of IRFB3307 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 75 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 6.3 mΩ
- Continuous Drain Current: 130 A
- Total Gate Charge: 120 nC
- Power Dissipation: 250 W
- Package: TO-220AB