IRF6718L2 MOSFET
Specifications of IRF6718L2 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 25 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.7 mΩ
- Continuous Drain Current: 270 A
- Total Gate Charge: 64 nC
- Power Dissipation: 83 W
- Package: DIRECTFET L6
Pinout of IRF6718L2
