IRF6717M MOSFET
Specifications of IRF6717M MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 25 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.25 mΩ
- Continuous Drain Current: 220 A
- Total Gate Charge: 46 nC
- Power Dissipation: 96 W
- Package: DIRECTFET MX
Pinout of IRF6717M
