IRF6713S MOSFET
Specifications of IRF6713S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 25 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 3 mΩ
- Continuous Drain Current: 95 A
- Total Gate Charge: 21 nC
- Power Dissipation: 42 W
- Package: DIRECTFET SQ
Pinout of IRF6713S
