IRF6710S2 MOSFET

Specifications of IRF6710S2 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 25 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 5.9 mΩ
  • Continuous Drain Current: 37 A
  • Total Gate Charge: 8.8 nC
  • Power Dissipation: 15 W
  • Package: DIRECTFET S1

Pinout of IRF6710S2

IRF6710S2 pinout

Replacement and Equivalent of IRF6710S2 Transistor

You can replace the IRF6710S2 with the IRF6706S2