IRF6709S2 MOSFET

Specifications of IRF6709S2 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 25 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 7.8 mΩ
  • Continuous Drain Current: 39 A
  • Total Gate Charge: 8.1 nC
  • Power Dissipation: 21 W
  • Package: DIRECTFET S1

Pinout of IRF6709S2

IRF6709S2 pinout

Replacement and Equivalent of IRF6709S2 Transistor

You can replace the IRF6709S2 with the IRF6706S2