IRF6708S2 MOSFET
Specifications of IRF6708S2 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 8.9 mΩ
- Continuous Drain Current: 36 A
- Total Gate Charge: 6.6 nC
- Power Dissipation: 20 W
- Package: DIRECTFET S1
Pinout of IRF6708S2
