IRF6691 MOSFET

Specifications of IRF6691 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 20 V
  • Gate-to-Source Voltage, max: ±12 V
  • Drain-Source On-State Resistance, max: 1.8 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 47 nC
  • Power Dissipation: 2 W
  • Package: DIRECTFET MT

Pinout of IRF6691

IRF6691 pinout

Replacement and Equivalent of IRF6691 Transistor

You can replace the IRF6691 with the IRF6726M