IRF6665 MOSFET

Specifications of IRF6665 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 62 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 8.7 nC
  • Power Dissipation: 42 W
  • Package: DIRECTFET SH

Pinout of IRF6665

IRF6665 pinout

Replacement and Equivalent of IRF6665 Transistor

You can replace the IRF6665 with the IRF6655