IRF3808S MOSFET

Specifications of IRF3808S MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 75 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 7 mΩ
  • Continuous Drain Current: 105 A
  • Total Gate Charge: 150 nC
  • Power Dissipation: 200 W
  • Package: D2-PAK

Pinout of IRF3808S

IRF3808S pinout

Replacement and Equivalent of IRF3808S Transistor

You can replace the IRF3808S with the IRF2907ZS, IRFS3107, IRFS3207, IRFS3207Z, IRFS3307, IRFS3307Z, IRFS4010, IRFS4310, IRFS4310Z