IRF2804 MOSFET
Specifications of IRF2804 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 40 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 2.3 mΩ
- Continuous Drain Current: 280 A
- Total Gate Charge: 160 nC
- Power Dissipation: 330 W
- Package: TO-220AB