IRF1607 MOSFET
Specifications of IRF1607 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 75 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 7.5 mΩ
- Continuous Drain Current: 142 A
- Total Gate Charge: 210 nC
- Power Dissipation: 380 W
- Package: TO-220AB
Pinout of IRF1607
