IRF1010ZS MOSFET
Specifications of IRF1010ZS MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 7.5 mΩ
- Continuous Drain Current: 94 A
- Total Gate Charge: 63 nC
- Power Dissipation: 140 W
- Package: D2-PAK
Pinout of IRF1010ZS
Replacement and Equivalent of IRF1010ZS Transistor
You can replace the IRF1010ZS with the
IRF1405S,
IRF1405ZS,
IRF2805S,
IRF2907ZS,
IRF3205ZS,
IRF3808S,
IRFS3006,
IRFS3107,
IRFS3206,
IRFS3207,
IRFS3207Z,
IRFS3306,
IRFS3307,
IRFS3307Z,
IRFS4010,
IRFS4310,
IRFS4310Z
