IRF1010Z MOSFET
Specifications of IRF1010Z MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 7.5 mΩ
- Continuous Drain Current: 94 A
- Total Gate Charge: 63 nC
- Power Dissipation: 140 W
- Package: TO-220AB
Pinout of IRF1010Z
Replacement and Equivalent of IRF1010Z Transistor
You can replace the IRF1010Z with the
IRF1405,
IRF1405Z,
IRF1607,
IRF2805,
IRF2907Z,
IRF3205Z,
IRF3808,
IRFB3006,
IRFB3006G,
IRFB3077,
IRFB3077G,
IRFB3206,
IRFB3206G,
IRFB3207,
IRFB3207Z,
IRFB3207ZG,
IRFB3256,
IRFB3306,
IRFB3306G,
IRFB3307,
IRFB3307Z,
IRFB4110,
IRFB4110G,
IRFB4310,
IRFB4310G,
IRFB4310Z,
IRFB4310ZG
