Transistor bipolaire MJE801T

• Type de transistor: NPN
• Tension collecteur-émetteur maximum: 60 V
• Tension collecteur-base maximum: 60 V
• Tension émetteur-base maximum: 5 V
• Courant collecteur continu maximum: 4 A
• Dissipation de puissance maximum: 50 W
• Gain de courant (h_fe): 750
• Température de stockage et de fonctionnement: -55 to +150 °C
• Boîtier: TO-220

Voici une image montrant le schéma des broches de ce transistor.Le transistor PNP complémentaire du MJE801T est le MJE701T.Vous pouvez remplacer le transistor MJE801T par 2N6043, 2N6043G, 2N6044, 2N6044G, 2N6045, 2N6045G, 2N6387, 2N6387G, 2N6388, 2N6388G, 2N6530, 2N6532, 2SC3145, 2SD1190, 2SD1191, 2SD1192, 2SD1195, 2SD1196, 2SD1276, 2SD1276-P, 2SD1276-Q, 2SD1276A, 2SD1276A-P, 2SD1276A-Q, 2SD1277, 2SD1277-P, 2SD1277-Q, 2SD1277A, 2SD1277A-P, 2SD1277A-Q, 2SD1414, 2SD1415, 2SD1415A, 2SD1825, 2SD1826, 2SD1827, 2SD1829, 2SD1830, 2SD1891, 2SD1891-P, 2SD1891-Q, 2SD1892, 2SD1892-P, 2SD1892-Q, 2SD2241, 2SD2495, 2SD2495-O, 2SD2495-P, 2SD2495-Y, 2SD560, 2SD560-KB, 2SD560-LB, 2SD560-MB, 2SD633, 2SD634, 2SD635, 2SD837, 2SD837-P, 2SD837-Q, 2SD837-R, 2SD837A, 2SD837A-P, 2SD837A-Q, 2SD837A-R, BD645, BD647, BD649, BD651, BD897, BD897A, BD899, BD899A, BD901, BDT61, BDT61A, BDT61B, BDT61C, BDT63, BDT63A, BDT63B, BDT63C, BDT65, BDT65A, BDT65B, BDT65C, BDW23A, BDW23B, BDW23C, BDW40, BDW41, BDW41G, BDW42, BDW42G, BDW43, BDW53A, BDW53B, BDW53C, BDW53D, BDW63A, BDW63B, BDW63C, BDW63D, BDW73A, BDW73B, BDW73C, BDW73D, BDW93A, BDW93B, BDW93C, BDW93CF, BDX33A, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, BDX53A, BDX53B, BDX53BG, BDX53C, BDX53CG, KSB601, KSB601-O, KSB601-R, KSB601-Y, KSD560, KSD560-O, KSD560-R, KSD560-Y, MJE800T, MJE802T, MJE803T, MJF122, MJF122G, MJF6388, MJF6388G, TIP100, TIP100G, TIP101, TIP101G, TIP102, TIP102G, TIP120, TIP120G, TIP121, TIP121G, TIP122, TIP122G, TIP130, TIP130G, TIP131, TIP131G, TIP132, TIP132G, TIP140T, TIP141T, TIP142T ou TTD1415B.