TTD1415B Bipolar Transistor
Characteristics of TTD1415B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 120 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 7 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 2000 to 15000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220F
Pinout of TTD1415B
Complementary PNP transistor
Replacement and Equivalent for TTD1415B transistor
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