TTD1415B Bipolar Transistor

Characteristics of TTD1415B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 2000 to 15000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of TTD1415B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the TTD1415B is the TTB1020B.

Replacement and Equivalent for TTD1415B transistor

You can replace the TTD1415B with the 2N6045, 2N6045G, 2SD1196, 2SD1415, 2SD1415A, 2SD1830, 2SD633, BD543C, BD545C, BD649, BD651, BD801, BD901, BDT63B, BDT63C, BDT65B, BDT65C, BDT85, BDT85F, BDT87, BDT87F, BDW42, BDW42G, BDW43, BDW73C, BDW73D, BDX33C, BDX33CG, BDX33D, BDX53C, BDX53CG, BDX53D, BDX53E, BDX53F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP102, TIP102G, TIP132, TIP132G or TIP142T.
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