TTB1020B Bipolar Transistor
Characteristics of TTB1020B Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -7 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 2000 to 15000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220F
Pinout of TTB1020B
Complementary NPN transistor
Replacement and Equivalent for TTB1020B transistor
If you find an error please send an email to mail@el-component.com