MJ14001 Bipolar Transistor
Characteristics of MJ14001 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -60 A
- Collector Dissipation: 300 W
- DC Current Gain (hfe): 15 to 100
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of MJ14001
Complementary NPN transistor
Replacement and Equivalent for MJ14001 transistor
Lead-free Version
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