2SC2922-O Bipolar Transistor

Characteristics of 2SC2922-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 30 to 60
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-200

Pinout of 2SC2922-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC2922-O transistor can have a current gain of 30 to 60. The gain of the 2SC2922 will be in the range from 30 to 180, for the 2SC2922-G it will be in the range from 90 to 180, for the 2SC2922-P it will be in the range from 70 to 140, for the 2SC2922-Y it will be in the range from 50 to 100.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC2922-O might only be marked "C2922-O".

Complementary PNP transistor

The complementary PNP transistor to the 2SC2922-O is the 2SA1216-O.
If you find an error please send an email to mail@el-component.com