2SB601-M Bipolar Transistor

Characteristics of 2SB601-M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 2000 to 5000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB601-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB601-M transistor can have a current gain of 2000 to 5000. The gain of the 2SB601 will be in the range from 2000 to 15000, for the 2SB601-K it will be in the range from 5000 to 15000, for the 2SB601-L it will be in the range from 3000 to 7000.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB601-M might only be marked "B601-M".

Complementary NPN transistor

The complementary NPN transistor to the 2SB601-M is the 2SD560-MB.

Replacement and Equivalent for 2SB601-M transistor

You can replace the 2SB601-M with the 2N6042, 2N6042G, 2SB1020, 2SB1020A, 2SB1227, 2SB1228, 2SB673, 2SB885, 2SB886, BD244C, BD540C, BD544C, BD546C, BD650, BD652, BD802, BD902, BD954, BD956, BDT62B, BDT62C, BDT64B, BDT64C, BDT86, BDT86F, BDT88, BDT88F, BDW24C, BDW47, BDW47G, BDW48, BDW64C, BDW64D, BDW74C, BDW74D, BDX34C, BDX34CG, BDX34D, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF127, MJF127G, MJF15031, MJF15031G, TIP107, TIP107G, TIP127, TIP127G, TIP137, TIP137G, TIP147T or TTB1020B.
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