2SB1127-R Bipolar Transistor

Characteristics of 2SB1127-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -25 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 320 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-126

Pinout of 2SB1127-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1127-R transistor can have a current gain of 100 to 200. The gain of the 2SB1127 will be in the range from 100 to 400, for the 2SB1127-S it will be in the range from 140 to 280, for the 2SB1127-T it will be in the range from 200 to 400.


Sometimes the "2S" prefix is not marked on the package - the 2SB1127-R might only be marked "B1127-R".

Replacement and Equivalent for 2SB1127-R transistor

You can replace the 2SB1127-R with the 2SA1120, 2SA1357, 2SA1357-O, 2SB1140 or 2SB1140-R.
If you find an error please send an email to mail@el-component.com