2SB1127 Bipolar Transistor

Characteristics of 2SB1127 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -25 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 400
  • Transition Frequency, min: 320 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-126

Pinout of 2SB1127

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1127 transistor can have a current gain of 100 to 400. The gain of the 2SB1127-R will be in the range from 100 to 200, for the 2SB1127-S it will be in the range from 140 to 280, for the 2SB1127-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1127 might only be marked "B1127".

Replacement and Equivalent for 2SB1127 transistor

You can replace the 2SB1127 with the 2SB1140.
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