2SB1127 Bipolar Transistor

Characteristics of 2SB1127 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -25 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 400
  • Transition Frequency, min: 320 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-126

Pinout of 2SB1127

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1127 transistor can have a current gain of 100 to 400. The gain of the 2SB1127-R will be in the range from 100 to 200, for the 2SB1127-S it will be in the range from 140 to 280, for the 2SB1127-T it will be in the range from 200 to 400.


Sometimes the "2S" prefix is not marked on the package - the 2SB1127 might only be marked "B1127".

Replacement and Equivalent for 2SB1127 transistor

You can replace the 2SB1127 with the 2SB1140.
If you find an error please send an email to mail@el-component.com