2SA1357-O Bipolar Transistor

Characteristics of 2SA1357-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -35 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126F

Pinout of 2SA1357-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1357-O transistor can have a current gain of 100 to 200. The gain of the 2SA1357 will be in the range from 100 to 320, for the 2SA1357-Y it will be in the range from 160 to 320.


Sometimes the "2S" prefix is not marked on the package - the 2SA1357-O might only be marked "A1357-O".

Replacement and Equivalent for 2SA1357-O transistor

You can replace the 2SA1357-O with the 2SA1120, 2SB1127, 2SB1127-R, 2SB1140 or 2SB1140-R.
If you find an error please send an email to mail@el-component.com