IRFB3004G MOSFET

Specifications of IRFB3004G MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 40 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 1.75 mΩ
  • Continuous Drain Current: 340 A
  • Total Gate Charge: 160 nC
  • Power Dissipation: 380 W
  • Package: TO-220AB

Pinout of IRFB3004G

IRFB3004G pinout

Replacement and Equivalent of IRFB3004G Transistor

You can replace the IRFB3004G with the IRFB3004