IRF1018ES MOSFET
Specifications of IRF1018ES MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 8.4 mΩ
- Continuous Drain Current: 79 A
- Total Gate Charge: 46 nC
- Power Dissipation: 110 W
- Package: D2-PAK
Pinout of IRF1018ES
Replacement and Equivalent of IRF1018ES Transistor
You can replace the IRF1018ES with the
IRF1407S,
IRF2907ZS,
IRF3808S,
IRFS3006,
IRFS3107,
IRFS3206,
IRFS3207,
IRFS3207Z,
IRFS3306,
IRFS3307,
IRFS3307Z,
IRFS4010,
IRFS4310,
IRFS4310Z
