Specifications of IRF1018ES MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 60 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 8.4
  • Continuous Drain Current: 79 A
  • Total Gate Charge: 46 nC
  • Power Dissipation: 110 W
  • Package: D2-PAK

Pinout of IRF1018ES

IRF1018ES pinout

Replacement and Equivalent of IRF1018ES Transistor

You can replace the IRF1018ES with the IRF1407S, IRF2907ZS, IRF3808S, IRFS3006, IRFS3107, IRFS3206, IRFS3207, IRFS3207Z, IRFS3306, IRFS3307, IRFS3307Z, IRFS4010, IRFS4310, IRFS4310Z