STD03N Bipolar Transistor

Characteristics of STD03N Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 160 W
  • DC Current Gain (hfe): 5000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P-5WO4

Pinout of STD03N

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STD03N transistor can have a current gain of 5000 to 20000. The gain of the STD03N-O will be in the range from 5000 to 12000, for the STD03N-Y it will be in the range from 8000 to 20000.

Equivalent circuit

STD03N equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the STD03N is the STD03P.
If you find an error please send an email to mail@el-component.com