STD03N Bipolar Transistor
Characteristics of STD03N Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 160 W
- DC Current Gain (hfe): 5000 to 20000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P-5WO4
Pinout of STD03N
Classification of hFE
Equivalent circuit
Complementary PNP transistor
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