NTE292 Bipolar Transistor

Characteristics of NTE292 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -130 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 16 W
  • DC Current Gain (hfe): 15 to 150
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of NTE292

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the NTE292 is the NTE291.
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