MJF2955G Bipolar Transistor
Characteristics of MJF2955G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -90 V
- Collector-Base Voltage, max: -90 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 20 to 100
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220F
- Electrically Similar to the Popular MJE2955T transistor
- The MJF2955G is the lead-free version of the MJF2955 transistor
Pinout of MJF2955G
Complementary NPN transistor
Replacement and Equivalent for MJF2955G transistor
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