MJE5182 Bipolar Transistor

Characteristics of MJE5182 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 15 to 100
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5182

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE5182 is the MJE5172.

Replacement and Equivalent for MJE5182 transistor

You can replace the MJE5182 with the TIP41F or TIP42F.
If you find an error please send an email to mail@el-component.com