MJE5170 Bipolar Transistor

Characteristics of MJE5170 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 15 to 100
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5170

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE5170 is the MJE5180.

Replacement and Equivalent for MJE5170 transistor

You can replace the MJE5170 with the MJE5171 or MJE5172.
If you find an error please send an email to mail@el-component.com