KSE13006H1 Bipolar Transistor

Characteristics of KSE13006H1 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 600 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 15 to 28
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of KSE13006H1

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSE13006H1 transistor can have a current gain of 15 to 28. The gain of the KSE13006 will be in the range from 8 to 60, for the KSE13006H2 it will be in the range from 26 to 39.

Replacement and Equivalent for KSE13006H1 transistor

You can replace the KSE13006H1 with the 2N6738, 2N6739, 2N6740, 2SC2898, 2SC3057, 2SC4107, 2SC4107-L, 2SC4108, 2SC4108-L, 2SC4162, 2SC4162-L, 2SC4163, 2SC4163-L, 2SC4164, 2SC4164-L, FJP13007, FJP13007H1, FJP13009, FJP13009H2, KSE13007, KSE13007F, KSE13007FH1, KSE13007H1, KSE13008, KSE13008H2, KSE13009, KSE13009H2, MJE13006, MJE13007, MJE13007A, MJE13007G, MJE13008, MJE13009, MJE13009G, MJE18008, MJE18008G, MJF18008, MJF18008G, STD13007, STD13007-A, STD13007F, STD13007FC, STD13007FC-A, STD13007P or STD13007P-A.
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