KSD569 Bipolar Transistor
Characteristics of KSD569 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 7 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 40 to 200
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- Electrically Similar to the Popular 2SD569 transistor
Pinout of KSD569
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for KSD569 transistor
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