KSB601-R Bipolar Transistor

Characteristics of KSB601-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 2000 to 5000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of KSB601-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB601-R transistor can have a current gain of 2000 to 5000. The gain of the KSB601 will be in the range from 2000 to 15000, for the KSB601-O it will be in the range from 3000 to 7000, for the KSB601-Y it will be in the range from 5000 to 15000.

Complementary PNP transistor

The complementary PNP transistor to the KSB601-R is the KSD560-R.

Replacement and Equivalent for KSB601-R transistor

You can replace the KSB601-R with the 2N6045, 2N6045G, 2N6531, 2N6532, 2N6533, 2SD1195, 2SD1196, 2SD1415, 2SD1415A, 2SD1829, 2SD1830, 2SD560, 2SD560-MB, 2SD633, 2SD772, 2SD772A, 2SD792, 2SD792A, BD243C, BD539C, BD539D, BD543C, BD545C, BD649, BD651, BD801, BD901, BD953, BD955, BDT63B, BDT63C, BDT65B, BDT65C, BDT85, BDT85F, BDT87, BDT87F, BDW23C, BDW42, BDW42G, BDW43, BDW63C, BDW63D, BDW73C, BDW73D, BDX33C, BDX33CG, BDX33D, BDX53C, BDX53CG, BDX53D, BDX53E, BDX53F, KSD560, KSD560-R, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF122, MJF122G, MJF15030, MJF15030G, TIP102, TIP102G, TIP122, TIP122G, TIP132, TIP132G, TIP142T, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E, TIP42F or TTD1415B.
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