KSA1010 Bipolar Transistor
Characteristics of KSA1010 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -7 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 40 to 200
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- Electrically Similar to the Popular 2SA1010 transistor
Pinout of KSA1010
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for KSA1010 transistor
If you find an error please send an email to mail@el-component.com