BDT93F Bipolar Transistor

Characteristics of BDT93F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 32 W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT93F

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT93F is the BDT94F.

Replacement and Equivalent for BDT93F transistor

You can replace the BDT93F with the BDT93, BDT95 or BDT95F.
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