BDP950 Bipolar Transistor

Characteristics of BDP950 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 3 W
  • DC Current Gain (hfe): 85 to 475
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-223

Pinout of BDP950

Here is an image showing the pin diagram of this transistor.

Marking

The BDP950 transistor is marked as "BDP950".

Complementary NPN transistor

The complementary NPN transistor to the BDP950 is the BDP949.

Replacement and Equivalent for BDP950 transistor

You can replace the BDP950 with the BDP952, BDP954, BDP956 or NZT45H8.
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