2SD789-E Bipolar Transistor

Characteristics of 2SD789-E Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SD789-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD789-E transistor can have a current gain of 400 to 800. The gain of the 2SD789 will be in the range from 100 to 800, for the 2SD789-B it will be in the range from 100 to 200, for the 2SD789-C it will be in the range from 160 to 320, for the 2SD789-D it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD789-E might only be marked "D789-E".
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