2SD789-E Bipolar Transistor
Characteristics of 2SD789-E Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 50 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 0.9 W
- DC Current Gain (hfe): 400 to 800
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92MOD
Pinout of 2SD789-E
Classification of hFE
Marking
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