2SD669 Bipolar Transistor

Characteristics of 2SD669 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD669

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD669 transistor can have a current gain of 60 to 320. The gain of the 2SD669-B will be in the range from 60 to 120, for the 2SD669-C it will be in the range from 100 to 200, for the 2SD669-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD669 might only be marked "D669".

Complementary PNP transistor

The complementary PNP transistor to the 2SD669 is the 2SB649.

Replacement and Equivalent for 2SD669 transistor

You can replace the 2SD669 with the 2SC2481.
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